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INTEGRATED CIRCUITS
DATA SHEET
TDA8010M; TDA8010AM Low power mixers/oscillators for satellite tuners
Objective specification Supersedes data of 1996 Oct 08 File under Integrated Circuits, IC02 1996 Oct 24
Philips Semiconductors
Objective specification
Low power mixers/oscillators for satellite tuners
FEATURES * Fully balanced mixer with common base input * Wide input power and frequency range * One-band 2 pin oscillator * Local oscillator buffer and prescaler * SAW filter IF preamplifier with gain control input and switchable output * Bandgap voltage stabilizer for oscillator stability * External IF filter between the mixer output and the IF amplifier input. APPLICATIONS * Down frequency conversion in DBS (Direct Broadcasting Satellite) satellite receivers. QUICK REFERENCE DATA SYMBOL VCC ICC fRF fosc NFM Gmax Gmin PARAMETER supply voltage supply current RF frequency range oscillator frequency mixer noise figure maximum total gain minimum total gain corrected for image mixer plus IF mixer plus IF CONDITIONS - 700 1380 - - - MIN. 4.5 GENERAL DESCRIPTION
TDA8010M; TDA8010AM
The TDA8010M; TDA8010AM are integrated circuits that perform the mixer/oscillator function in satellite tuners. The devices include a gain controlled IF amplifier that can directly drive two single-ended SAW filters or a differential SAW filter using a three function switchable output. They contain an internal LO prescaler and buffer that is compatible with the input of a terrestrial or satellite frequency synthesizer. They are also suitable for digital TV tuners. These devices are available in small outline packages that give the designer the capability to design an economical and physically small satellite tuner.
TYP. 5.0 70 - - 10 40 -17
MAX. 5.5 - 2150 2650 - - -
UNIT V mA MHz MHz dB dB dB
ORDERING INFORMATION TYPE NUMBER TDA8010M TDA8010AM PACKAGE NAME SSOP20 DESCRIPTION plastic shrink small outline package; 20 leads; body width 4.4 mm VERSION SOT266-1
1996 Oct 24
2
Philips Semiconductors
Objective specification
Low power mixers/oscillators for satellite tuners
BLOCK DIAGRAM
TDA8010M; TDA8010AM
handbook, full pagewidth
LOOUT2 LOOUT1 LOGND OSC2 OSC1 OSCGND IFOUT2 VCC IFGND IFOUT1
20 (1) 19 (2) 18 (3) 17 (4) 16 (5) OSCILLATOR 15 (6) 14 (7) 13 (8) 12 (9) 11 (10) OUTPUT SWITCH SWITCH CONTROL IF AMP LO BUFFER RF INPUT STAGE DIVIDE-BY-2 PRE-SCALER STABILIZER
(20) 1 (19) 2 (18) 3 (17) 4 (16) 5 (15) 6 (14) 7
SC VCCM RFIN1 RFIN2 MGND MOUT1 MOUT2
(13) 8 (12) 9
IFIN1 IFIN2
TDA8010M TDA8010AM
VCC
RAGC
(11) 10
AGC
MGE506
The pin numbers given in parenthesis refer to the TDA8010AM.
Fig.1 Block diagram.
1996 Oct 24
3
Philips Semiconductors
Objective specification
Low power mixers/oscillators for satellite tuners
PINNING PINS SYMBOL TDA8010M SC VCCM RFIN1 RFIN2 MGND MOUT1 MOUT2 IFIN1 IFIN2 AGC IFOUT1 IFGND VCC IFOUT2 OSCGND OSC1 OSC2 LOGND LOOUT1 LOOUT2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 TDA8010AM 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 IF output switch control supply voltage for mixer RF input 1 RF input 2 ground for mixer mixer output 1 mixer output 2 IF amplifier input 1 IF amplifier input 2 IF amplifier gain control input IF amplifier output 1 ground for IF amplifier supply voltage IF amplifier output 2 ground for oscillator oscillator tuning circuit input 1 oscillator tuning circuit input 2 ground for local oscillator buffer local oscillator output 1 local oscillator output 2
TDA8010M; TDA8010AM
DESCRIPTION
handbook, halfpage
handbook, halfpage
SC VCCM RFIN1 RFIN2 MGND MOUT1 MOUT2 IFIN1 IFIN2
1 2 3 4 5
20 LOOUT2 19 LOOUT1 18 LOGND 17 OSC2 16 OSC1
LOOUT2 LOOUT1 LOGND OSC2 OSC1 OSCGND IFOUT2 VCC IFGND
1 2 3 4 5
20 SC 19 VCCM 18 RFIN1 17 RFIN2 16 MGND
TDA8010M
6 7 8 9 15 14 13 12 OSCGND IFOUT2 VCC IFGND 6 7 8 9
TDA8010AM
15 MOUT1 14 MOUT2 13 IFIN1 12 IFIN2
AGC 10
MGE504
11 IFOUT1
IFOUT1 10
MGE505
11 AGC
Fig.2 Pin configuration (TDA8010M).
Fig.3 Pin configuration (TDA8010AM).
1996 Oct 24
4
Philips Semiconductors
Objective specification
Low power mixers/oscillators for satellite tuners
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Vi(max) Isource(max) tsc Tstg Tj Tamb supply voltage maximum input voltage on all pins maximum output source current maximum short-circuit time on all outputs storage temperature junction temperature operating ambient temperature PARAMETER
TDA8010M; TDA8010AM
MIN. -0.3 -0.3 - - -55 - -20
MAX. +6.0 VCC 10 10 +150 150 +80 V V mA s C C C
UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-a HANDLING All pins withstand the ESD test in accordance with "UZW-BO/FQ-A302 (human body model)" and with "UZW-BO/FQ-B302 (machine model)". PARAMETER thermal resistance from junction to ambient in free air VALUE 120 UNIT K/W
1996 Oct 24
5
Philips Semiconductors
Objective specification
Low power mixers/oscillators for satellite tuners
TDA8010M; TDA8010AM
CHARACTERISTICS VCC = 5 V; Tamb = 25 C; measured in application circuit of Fig.6; unless otherwise specified. SYMBOL Supplies VCC ICC Mixer fRF NF GM Gmax1 Gmin1 Gmax2 Gmin2 ZI(RF) ZO(RF) IP3 IP2 RF frequency range total noise figure (mixer plus IF); VAGC = 0.9VCC; fi = 920 MHz not corrected for image VAGC = 0.9VCC; fi = 2150 MHz available power gain for mixer maximum total gain (mixer + IFOUT1) minimum total gain (mixer + IFOUT1) maximum total gain (mixer + IFOUT2) minimum total gain (mixer + IFOUT2) input impedance (Rs + Ls) output impedance (Rp//Cp) (open collector) third-order interception point second-order interception point RL = 2.2 k fi = 920 MHz; notes 1 and 2 fi = 2150 MHz; notes 1 and 2 notes 1 and 2 fi = 920 MHz; notes 1 and 2 fi = 2150 MHz; notes 1 and 2 notes 1 and 2 from 920 to 2150 MHz fIF = 480 MHz see Fig.4 see Fig.5 RL = 50 700 - - - 37 36 - 36 35 - 20 5 8 450 -2 10 - 8 13 10 40 38 -30 39 37 -30 30 7.5 12 550 +2 25 2150 10 15 - - - -14 - - -15 40 10 16 650 - - MHz dB dB dB dB dB dB dB dB dB nH k fF dBm dBm supply voltage supply current 4.75 60 5.0 70 5.25 80 V mA PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Local oscillator output VLO SRF LOleak Oscillator fosc fosc(max) fshift oscillator frequency range maximum oscillator frequency oscillator frequency shift VCC = 4.75 to 5.25 V; at 2550 MHz VCC = 4.75 to 5.25 V; at 2650 MHz fdrift oscillator frequency drift T = 25 C; at 2550 MHz T = 25 C; at 2650 MHz VCC = 4.5 to 5.5 V; Tamb = -20 to +80 C 1380 - - - - - - 2700 350 400 -8 -8 2650 - 500 600 -15 -16 MHz MHz kHz kHz MHz MHz output voltage 87 - - - 90 -35 -50 -35 93 -10 - - dBV dB dBm dBm spurious signal on LO output RL = 50 ; note 3 with respect to LO output signal local oscillator leakage RF input IF output (mixer)
1996 Oct 24
6
Philips Semiconductors
Objective specification
Low power mixers/oscillators for satellite tuners
SYMBOL N PARAMETER oscillator phase noise CONDITIONS at 100 kHz at 10 kHz IF amplifier fIF Gv(max) Gv(min) NFIF VoIF ZO(IF) ZI(IF) SWiso VSW IF frequency range maximum voltage gain minimum voltage gain IF noise figure output voltage level output impedance input impedance (Rp//Lp) switch isolation switch control voltage note 5 IF1 on; IF2 off IF1 off; IF2 on differential output RI(AGC) Notes 1. Maximum gain: VAGC = 0.9VCC; fIF = 480 MHz; IF output single-ended. 2. Minimum gain: VAGC = 0.1VCC; fIF = 480 MHz; IF output single-ended. 3. RF input power range = -70 to -20 dBm. 4. VAGC = 0.9VCC; fIF = 480 MHz; Rsource = 100 . AGC input resistance see Fig.6 single-ended note 1 note 2 note 4
TDA8010M; TDA8010AM
MIN. 88 62
TYP. 92 69 - 40 -30 8 - 50 33 7 36 - - - 4 - -
MAX.
UNIT dBc dBc
60 - - - - - 30 5 33 0.8VCC 0.2VCC 0 -
625 - - - 85 - 36 9 - VCC 0.6VCC 0.07VCC -
MHz dB dB dB dBV nH dB V V V k
5. Switch isolation is defined at an IF output level of 77 dBV; fIF = 480 MHz.
handbook, halfpage handbook, halfpage
REF IM2
IM3
2F1 - F2 390
F1 420
F2 450
2F2 - F1 480 (MHz)
MGE507
FI RF
LO - F1 478 964
LO - F2 480 962
(F1 + F2) - LO 484 (MHz) 1926 (MHz)
MGE508
REF is the level if F1 or F2 were at 480 MHz. IP3 = IM3/2 + input level. Input level: 2 x -23 dBm. Output level: 2 x 74 dBV.
IP2 = IM2 + input level. Input level: 2 x -23 dBm. Output level: 2 x 74 dBV.
Fig.4 IP3 measurement method.
Fig.5 IP2 measurement method.
1996 Oct 24
7
book, full pagewidth
1996 Oct 24
3.3 nF LOOUT2 1 SC VCCM VCC 10 nF 18 RFIN1 3.3 nF 0.56 pF 33 OSCGND 6 IFOUT2 7 3.3 nF VCC 10 nF IFGND 9 IFOUT1 10 OUTPUT SWITCH RAGC VCC 8 IF AMP SWITCH CONTROL 15 MOUT1 VCC 3.3 k 13 IFIN1 12 IFIN2 3.3 pF 11 AGC 10 nF
MGE509
Philips Semiconductors
APPLICATION INFORMATION
20 DIVIDE-BY-2 PRE-SCALER STABILIZER 19 LO BUFFER 3.3 nF
50 load LOOUT1 2 LOGND 3 OSC2 4 17 RFIN2 16 MGND 1.5 pF OSC1 5 OSCILLATOR RF INPUT STAGE 3.3 nF
22 k
Low power mixers/oscillators for satellite tuners
2.2 F
12 k
12 k
BB833
22 k L3
VT
BB833
L3
L1
1 nF
22 k
22 k
8
3.3 nF
14 MOUT2
3.3 pF L2
150
TDA8010AM
VCC
2.7 pF
2.7 pF
150
L1: 5.5 turns; diameter = 5 mm. L2: 5.5 turns; diameter = 1.5 mm. L3: micro-strip coil; L = 3.5 x 0.4 mm. No ground plane on the other side. Varicaps: Siemens BB833.
TDA8010M; TDA8010AM
Objective specification
Fig.6 Application diagram.
Philips Semiconductors
Objective specification
Low power mixers/oscillators for satellite tuners
PACKAGE OUTLINE
TDA8010M; TDA8010AM
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
D
E
A X
c y HE vM A
Z
20
11
Q A2 pin 1 index A1 (A 3) Lp L A
1
e bp
10
detail X wM
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.5 A1 0.15 0 A2 1.4 1.2 A3 0.25 bp 0.32 0.20 c 0.20 0.13 D (1) 6.6 6.4 E (1) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.45 Q 0.65 0.45 v 0.2 w 0.13 y 0.1 Z (1) 0.48 0.18 10 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT266-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 90-04-05 95-02-25
1996 Oct 24
9
Philips Semiconductors
Objective specification
Low power mixers/oscillators for satellite tuners
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
TDA8010M; TDA8010AM
If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1996 Oct 24
10
Philips Semiconductors
Objective specification
Low power mixers/oscillators for satellite tuners
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TDA8010M; TDA8010AM
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Oct 24
11

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